BSZ018NE2LSATMA1
BSZ018NE2LSATMA1
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Infineon Technologies

BSZ018NE2LSATMA1


BSZ018NE2LSATMA1
F2465-BSZ018NE2LSATMA1
Active
MOSFET N-CH 25V 23A/40A TSDSON
8-PowerTDFN

BSZ018NE2LSATMA1 ECAD Model


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BSZ018NE2LSATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN

BSZ018NE2LSATMA1 Datasheet Download


BSZ018NE2LSATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSZ018NE2LSATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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34,560 In Stock


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Unit Price: $2.8096
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.6129 $2.6129
10+ $2.5848 $25.8483
100+ $2.4444 $244.4352
1000+ $2.3039 $1,151.9360
10000+ $2.1072 $2,107.2000
The price is for reference only, please refer to the actual quotation!

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