BSC900N20NS3GATMA1
BSC900N20NS3GATMA1
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Infineon Technologies

BSC900N20NS3GATMA1


BSC900N20NS3GATMA1
F2465-BSC900N20NS3GATMA1
Active
MOSFET N-CH 200V 15.2A TDSON-8
8-PowerTDFN

BSC900N20NS3GATMA1 ECAD Model


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BSC900N20NS3GATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-5
Package / Case 8-PowerTDFN

BSC900N20NS3GATMA1 Datasheet Download


BSC900N20NS3GATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSC900N20NS3GATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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31,630 In Stock


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Unit Price: $2.2186
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.0633 $2.0633
10+ $2.0411 $20.4111
100+ $1.9302 $193.0182
1000+ $1.8193 $909.6260
10000+ $1.6640 $1,663.9500
The price is for reference only, please refer to the actual quotation!

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