BSC0901NSIATMA1
BSC0901NSIATMA1
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Infineon Technologies

BSC0901NSIATMA1


BSC0901NSIATMA1
F2465-BSC0901NSIATMA1
Active
MOSFET N-CH 30V 28A/100A TDSON
8-PowerTDFN

BSC0901NSIATMA1 ECAD Model


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BSC0901NSIATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN

BSC0901NSIATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSC0901NSIATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the BSC0901NSIATMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

12,550 In Stock


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Unit Price: $0.8104
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.7537 $0.7537
10+ $0.7456 $7.4557
100+ $0.7050 $70.5048
1000+ $0.6645 $332.2640
10000+ $0.6078 $607.8000
The price is for reference only, please refer to the actual quotation!

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