BSC014NE2LSIATMA1
BSC014NE2LSIATMA1
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Infineon Technologies

BSC014NE2LSIATMA1


BSC014NE2LSIATMA1
F2465-BSC014NE2LSIATMA1
Active
MOSFET N-CH 25V 33A/100A TDSON
8-PowerTDFN

BSC014NE2LSIATMA1 ECAD Model


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BSC014NE2LSIATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN

BSC014NE2LSIATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSC014NE2LSIATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the BSC014NE2LSIATMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

28,400 In Stock


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Unit Price: $0.969
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.9012 $0.9012
10+ $0.8915 $8.9148
100+ $0.8430 $84.3030
1000+ $0.7946 $397.2900
10000+ $0.7268 $726.7500
The price is for reference only, please refer to the actual quotation!

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