BSC009NE2LSATMA1
BSC009NE2LSATMA1
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Infineon Technologies

BSC009NE2LSATMA1


BSC009NE2LSATMA1
F2465-BSC009NE2LSATMA1
Active
MOSFET N-CH 25V 41A/100A TDSON
8-PowerTDFN

BSC009NE2LSATMA1 ECAD Model


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BSC009NE2LSATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN

BSC009NE2LSATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSC009NE2LSATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the BSC009NE2LSATMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

7,920 In Stock


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Unit Price: $4.1854
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.8924 $3.8924
10+ $3.8506 $38.5057
100+ $3.6413 $364.1298
1000+ $3.4320 $1,716.0140
10000+ $3.1391 $3,139.0500
The price is for reference only, please refer to the actual quotation!

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