BSB012N03LX3 G
BSB012N03LX3 G
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Infineon Technologies

BSB012N03LX3 G


BSB012N03LX3 G
F2465-BSB012N03LX3 G
Active
MOSFET N-CH 30V 39A/180A 2WDSON
3-WDSON

BSB012N03LX3 G ECAD Model


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BSB012N03LX3 G Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

BSB012N03LX3 G Datasheet Download


BSB012N03LX3 G Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the BSB012N03LX3 G. This component can be purchased from FMALL, a reputable supplier of electronic components.

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