HGTD10N50F1
HGTD10N50F1
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
rohs

HARRIS

HGTD10N50F1


HGTD10N50F1
F14182-HGTD10N50F1
Active
75W 12A 500V IPAK IGBT Transistors / Modules ROHS
Bag-packed

HGTD10N50F1 ECAD Model


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HGTD10N50F1 Attributes


Type Description Select
Power Dissipation (Pd) 75W
Operating Temperature -55℃~+150℃@(Tj)
Collector Current (Ic) 12A
Collector-Emitter Breakdown Voltage (Vces) 500V
Input Capacitance (Cies@Vce) -
Type -
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.5V@10V,5A
Total Gate Charge (Qg@Ic,Vge) 13.4nC
Turn?on Switching Loss (Eon) -

HGTD10N50F1 Overview


HARRIS offers a wide range of electronic components for various applications, and one such component is the HGTD10N50F1. This component can be purchased from FMALL, a reputable supplier of electronic components.

The product page for the HGTD10N50F1 provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.

If you're looking for comprehensive data on the HGTD10N50F1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

HARRIS is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

28,740 In Stock


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Unit Price: $4.7833
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.4485 $4.4485
10+ $4.4006 $44.0064
100+ $4.1615 $416.1471
1000+ $3.9223 $1,961.1530
10000+ $3.5875 $3,587.4750
The price is for reference only, please refer to the actual quotation!

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