HC3M0045065K1
HC3M0045065K1
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
rohs

HXY MOSFET

HC3M0045065K1


HC3M0045065K1
F13910-HC3M0045065K1
Active
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Tube-packed

HC3M0045065K1 ECAD Model


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HC3M0045065K1 Attributes


Type Description Select
Drain-Source On-State Resistance(20V) 33mΩ
Channel Type 1 N-Channel
Drain Source Threshold Voltage 2V
Continuous Drain Current 49A
Drain Source Voltage 650V
Operating Temperature -55℃~+175℃

HC3M0045065K1 Overview


HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the HC3M0045065K1. This component can be purchased from FMALL, a reputable supplier of electronic components.

The product page for the HC3M0045065K1 provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.

If you're looking for comprehensive data on the HC3M0045065K1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

24,650 In Stock


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Unit Price: $9.2441
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $8.5970 $8.5970
10+ $8.5046 $85.0457
100+ $8.0424 $804.2367
1000+ $7.5802 $3,790.0810
10000+ $6.9331 $6,933.0750
The price is for reference only, please refer to the actual quotation!

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