HC3M00160120D
HC3M00160120D
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
rohs

HXY MOSFET

HC3M00160120D


HC3M00160120D
F13910-HC3M00160120D
Active
TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Tube-packed

HC3M00160120D ECAD Model


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HC3M00160120D Attributes


Type Description Select
Drain-Source On-State Resistance(20V) 160mΩ
Channel Type 1 N-Channel
Drain Source Threshold Voltage 2V
Continuous Drain Current 17A
Drain Source Voltage 1200V
Operating Temperature -55℃~+175℃

HC3M00160120D Overview


HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the HC3M00160120D. This component can be purchased from FMALL, a reputable supplier of electronic components.

The product page for the HC3M00160120D provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.

If you're looking for comprehensive data on the HC3M00160120D to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

15,790 In Stock


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Unit Price: $5.9008
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $5.4877 $5.4877
10+ $5.4287 $54.2874
100+ $5.1337 $513.3696
1000+ $4.8387 $2,419.3280
10000+ $4.4256 $4,425.6000
The price is for reference only, please refer to the actual quotation!

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