
Diodes Incorporated
FZT789AQTA
FZT789AQTA ECAD Model
FZT789AQTA Attributes
Type | Description | Select |
---|---|---|
Collector Cut-Off Current (Icbo) | 100nA | |
Collector-Emitter Breakdown Voltage (Vceo) | 35V | |
Power Dissipation (Pd) | 1.2W | |
DC Current Gain (hFE@Ic,Vce) | 300@10mA,2V | |
Collector Current (Ic) | 3A | |
Transition Frequency (fT) | 100MHz | |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@100mA,3A | |
Transistor Type | PNP | |
Operating Temperature | -55℃~+150℃@(Tj) |
FZT789AQTA Overview
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