HXY MOSFET
1N65G
1N65G ECAD Model
1N65G Attributes
| Type | Description | Select |
|---|---|---|
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 1A | |
| Power Dissipation (Pd) | 1W | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12Ω@10V,0.6A | |
| Type | 1 N-Channel |
1N65G Overview
HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the 1N65G. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the 1N65G provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the 1N65G to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
